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| Rev. 2.1 SPN01N60C3 VDS @ Tjmax RDS(on) ID 650 6 0.3 SOT-223 4 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance V A 3 2 1 VPS05163 Type Package Ordering Code Marking SPN01N60C3 SOT-223 Q67040-S4208 01N60C3 Maximum Ratings Parameter Continuous drain current TA = 25 C TA = 70 C Pulsed drain current, tp limited by Tjmax TA = 25 C Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, T A = 25C Symbol ID Value 0.3 0.2 Unit A ID puls VGS VGS Ptot Tj , Tstg 1.6 20 30 1.8 -55... +150 W C V Operating and storage temperature Page 1 2004-03-01 Rev. 2.1 SPN01N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 0.8 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250, VGS=V DS V DS=600V, VGS=0V, Tj=25C, Tj=150C Symbol min. RthJS RthJA Values typ. 35 110 max. 75 72 260 - Unit K/W Tsold - C Values typ. 700 3 0.5 5.5 15.1 max. 3.7 600 2.3 - Unit V A 1 50 100 6 nA Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=0.5A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Page 2 2004-03-01 Rev. 2.1 SPN01N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=350V, ID=0.3A, VGS=0 to 10V VDD=350V, ID=0.3A Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Conditions min. VDS2*ID*RDS(on)max, ID=0.2A VGS=0V, VDS=25V, f=1MHz Values typ. 0.45 100 40 2.5 45 30 60 30 max. 90 45 - Unit S pF VDD=350V, VGS =0/10V, ID=0.3A, R G=100 ns - 0.9 2.2 3.9 5.5 5 - nC V(plateau) VDD=350V, ID=0.3A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 3 2004-03-01 Rev. 2.1 SPN01N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD VGS=0V, IF=IS VR=350V, IF =IS , di F/dt=100A/s Symbol IS Conditions min. TA=25C Values typ. 0.85 200 0.45 max. 0.3 1.6 1.05 340 - Unit A ISM V ns C trr Qrr Page 4 2004-03-01 Rev. 2.1 SPN01N60C3 1 Power dissipation Ptot = f (TA) 1.9 SPN01N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T A=25C 10 1 W 1.6 1.4 A 10 0 Ptot 1 0.8 0.6 ID 10 -1 1.2 10 -2 0.4 0.2 0 0 10 -3 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10ms DC 1 2 3 20 40 60 80 100 120 C 160 10 10 TA 10 V VDS 3 Transient thermal impedance ZthJC = f (t p) 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: D = tp/T 10 2 parameter: tp = 10 s, VGS 2.5 K/W A 10 1 20V 10V 7V 6.5V ZthJC ID 10 0 1.5 6V 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 1 5.5V 0.5 5V 10 -2 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 s 10 1 0 0 5 10 15 V VDS 25 tp Page 5 2004-03-01 Rev. 2.1 SPN01N60C3 5 Drain-source on-state resistance RDS(on) = f (Tj) 6 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter : ID = 0.2 A, VGS = 10 V 34 SPN01N60C3 parameter: tp = 10 s 2.5 28 A RDS(on) 24 ID 20 16 12 8 4 0 -60 98% typ -20 20 60 100 C 1.5 1 0.5 180 0 0 4 8 12 VGS 20 Tj V 7 Typ. gate charge VGS = f (QGate ) parameter: ID = 0.3 A pulsed 16 V SPN01N60C3 8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 1 SPN01N60C3 A 12 VGS 0.2 VDS max 0.8 VDS max 10 0 8 6 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) nC 10 4 2 10 -2 0 0 0 1 2 3 4 5.5 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Page 6 VSD 2004-03-01 Rev. 2.1 SPN01N60C3 9 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPN01N60C3 10 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 3 V pF Ciss 10 2 V(BR)DSS 680 660 640 620 600 580 560 540 -60 10 0 0 10 1 C Coss Crss -20 20 60 100 C 180 10 20 30 40 50 60 70 80 Tj V 100 VDS Definition of diodes switching characteristics Page 7 2004-03-01 Rev. 2.1 SPN01N60C3 SOT223 A 6.5 0.2 3 0.1 0.1 max 1.6 0.1 B 7 0.3 15max 4 1 0.7 0.1 2 3 2.3 4.6 0.5 min 0.28 0.04 0.25 M A 0.25 Page 8 M B 2004-03-01 3.5 0.2 +0.2 acc. to DIN 6784 Rev. 2.1 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPN01N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 2004-03-01 |
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